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Selective XeF2 vapor etch for removing sacrificial silicon layers

Isotropic etching of silicon using xenon difluoride is an ideal solution for releasing MEMS or photonic devices. XeF2 shows high selectivity to silicon over almost all standard semiconductor materials including photoresist, silicon dioxide, silicon nitride and aluminum. Being a vapor phase etchant, XeF2 avoids many of the problems typically associated with wet or plasma etch processes.

SPTS offers a range of systems ranging from the table-top e2 for R&D, to the CVE module for integration into a volume production cluster system.

The accelerated etch rates and components make the Xactix® X4 ideal for intensive R&D and pilot production. It is the leading XeF2 etch system for releasing MEMS devices.  

Key Benefits

  · Equipped with our dual expansion chamber design for high etch rates

  · Allows for high XeF2 gas flow and pressure without dilution from carrier gases

  · Provides both pulsed and continuous flow etch processes

  · Unique expansion chamber based design contributes to precise, repeatable pulse 

    pressure and ease of mixing XeF2 with other gases

  · Customizable chamber size can be matched to the wafer size resulting in 

    maximized etch rates, uniformity and efficiency

  · Easy to use, reliable and safe

The Xactix® e2 is an ideal solution for those seeking a low cost, table-top R&D xenon difluoride etching system.

Key to successful research is process flexibility and the Xactix® e2™ provides the widest range of process options. Developed as the successor to the e1, the e2 retains ease of use, low cost of ownership and a small footprint, but adds additional options and even greater process flexibility.  

Key Benefits

  · Low cost, easy to use, and reliable

  · Great for working with small samples and wafers

  · Includes the etch unit, PC with keyboard and mouse, flat panel display, pump, 

    and manual

  · New options to increase process flexibility

  · Increased selectivity to SiN and SiO2

  · Additional process gas can be added

  · Pulsed and optional continuous flow etch processes

  · Lower installation costs

  · Easy field upgrades with options

The CVE module is compatible with SPTS' cluster platforms, and has a unique chamber design which provides high etch rates, uniformity and efficiency. It is designed allow high vplume production and the integration of  XeF2 modules with the other process modules available from SPTS.

Key Benefits

  · Patented chamber design optimized for gas phase etching

  · Edge lift to protect delicate double sided wafers

  · Temperature controlled chuck with optional backside helium for improved etch rates, uniformity and selectivity

  · Easy conversion between 150 mm and 200 mm wafers

  · Ability to clamp a wide variety of substrate thicknesses

  · Wide range of wafer handling options

  · Transfer under vacuum from a wide variety of SPTS modules